? semiconductor components industries, llc, 2011 august, 2011 ? rev. 5 1 publication order number: NTR4502P/d NTR4502P, nvtr4502p power mosfet ? 30 v, ? 1.95 a, single, p ? channel, sot ? 23 features ? leading planar technology for low gate charge / fast switching ? low r ds(on) for low conduction losses ? sot ? 23 surface mount for small footprint (3 x 3 mm) ? aec q101 qualified ? nvtr4502p ? these devices are pb ? free and are rohs compliant applications ? dc to dc conversion ? load/power switch for portables and computing ? motherboard, notebooks, camcorders, digital camera?s, etc. ? battery charging circuits maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss ? 30 v gate ? to ? source voltage v gs 20 v drain current (note 1) t < 10 s t a = 25 c i d ? 1.95 a t a = 70 c ? 1.56 power dissipation (note 1) t < 10 s p d 1.25 w continuous drain current (note 1) steady state t a = 25 c i d ? 1.13 a t a = 70 c ? 0.90 power dissipation (note 1) steady state p d 0.4 w pulsed drain current t p = 10 s i dm ? 6.8 a operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) i s ? 1.25 a lead temperature for soldering purposes (1/8 in from case for 10 s) t l 260 c thermal resistance ratings parameter symbol max unit junction ? to ? ambient ? steady state (note 1) r ja 300 c/w junction ? to ? ambient ? t = 10 s (note 1) r ja 100 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface ? mounted on fr4 board using 1 in sq. pad size (cu area = 1.127 in sq. [1 oz] including traces). http://onsemi.com marking diagram/ pin assignment s g d p ? channel mosfet v (br)dss r ds(on) typ i d max (note 1) ? 30 v 155 m @ ? 10 v 240 m @ ? 4.5 v ? 1.95 a device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. NTR4502Pt1g sot ? 23 (pb ? free) 3000 / tape & reel nvtr4502pt1g 3000 / tape & reel sot ? 23 (pb ? free) sot ? 23 case 318 style 21 tr2 = device code m = date code* = pb ? free package (note: microdot may be in either location) *date code orientation and/or overbar may vary depending upon manufacturing location. 3 drain 1 gate 2 source tr2 m
NTR4502P, nvtr4502p http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 30 v zero gate voltage drain current i dss v gs = 0 v, v ds = ? 30 v t j = 25 c ? 1 a t j = 55 c ? 10 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = ? 250 a ? 1.0 ? 3.0 v drain ? to ? source on resistance r ds(on) v gs = ? 10 v, i d = ? 1.95 a 155 200 m v gs = ? 4.5 v, i d = ? 1.5 a 240 350 forward transconductance g fs v ds = ? 10 v, i d = ? 1.25 a 3 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = ? 15 v 200 pf output capacitance c oss 80 reverse transfer capacitance c rss 50 total gate charge q g(tot) v gs = ? 10 v, v ds = ? 15 v; i d = ? 1.95 a 6 10 nc threshold gate charge q g(th) 0.3 gate ? to ? source charge q gs 1 gate ? to ? drain charge q gd 1.7 switching characteristics (note 4) turn ? on delay time t d(on) v gs = ? 10 v, v dd = ? 15 v, i d = ? 1.95 a, r g = 6 5.2 10 ns rise time t r 12 20 turn ? off delay time t d(off) 19 35 fall time t f 17.5 30 drain ? source diode characteristics (note 3) forward diode voltage v sd v gs = 0 v, i s = ? 1.25 a ? 0.8 ? 1.2 v reverse recovery time t rr v gs = 0 v, di sd /d t = 100 a/ s, i s = ? 1.25 a 23 ns 2. surface ? mounted on fr4 board using 1 in sq. pad size (cu area = 1.127 in sq. [1 oz] including traces). 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
NTR4502P, nvtr4502p http://onsemi.com 3 0 1 2 3 4 5 012345678910 figure 1. on ? region characteristics ? v ds , drain ? to ? source voltage (v) ? i d , drain current (a) v gs = ? 2.8 v v gs = ? 2.6 v v gs = ? 2.4 v v gs = ? 3.0 v v gs = ? 3.2 v v gs = ? 3.4 v v gs = ? 3.6 v v gs = ? 3.8 v t j = 25 c v gs = ? 5.0 v v gs = ? 7.0 v v gs = ? 10 v 0 1 2 3 4 5 1234567 figure 2. transfer characteristics ? v gs , gate ? to ? source voltage (v) ? i d , drain current (a) v ds = ? 10 v v gs = ? 4.0 v t j = 25 c t j = 100 c t j = ? 55 c 0.1 0.15 0.2 0.25 0.3 0.35 0.4 345678910 i d = ? 1.95 a t j = 25 c figure 3. on ? resistance versus gate ? to ? source voltage ? v gs , gate ? to ? source voltage (v) r ds(on) , drain ? to ? source resistance ( ) 0.1 0.15 0.2 0.25 0.3 1 1.5 2 2.5 3 3.5 4 4.5 5 t j = 25 c v gs = ? 4.5 v v gs = ? 10 v figure 4. on ? resistance versus drain current and gate voltage ? i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) 0.6 0.8 1 1.2 1.4 1.6 1.8 ? 50 ? 25 0 25 50 75 100 125 150 i d = ? 1.9 a v gs = ? 10 v figure 5. on ? resistance variation with temperature t j , junction temperature ( c) r ds(on) , drain ? to ? source resistance (normalized) 1 10 100 1000 2 6 10 14 18 22 26 30 figure 6. drain ? to ? source leakage current versus voltage ? v ds , drain ? to ? source voltage (v) ? i dss , leakage (na) t j = 150 c t j = 100 c v gs = 0 v
NTR4502P, nvtr4502p http://onsemi.com 4 0 100 200 300 400 500 10 5 0 5 1015202530 figure 7. capacitance variation gate ? to ? source or drain ? to ? source voltage (v) c, capacitance (pf) t j = 25 c v gs = 0 v v ds = 0 v c iss c rss c oss c iss c rss ? v gs ? v ds 0 2 4 6 8 10 12 01234567 0 3 6 9 12 15 18 q t q gd q gs figure 8. gate ? to ? source and drain ? to ? source voltage versus total charge q g , total gate charge (nc) ? v gs , gate ? to ? source voltage (v) ? v ds , drain ? to ? source voltage (v) i d = ? 1.95 a t j = 25 c 1 10 100 1 10 100 t, time (ns) figure 9. resistive switching time variation versus gate resistance r g , gate resistance ( ) t d(off) t f t r t d(on) v ds = ? 15 v i d = ? 1.95 v v gs = ? 10 v 0 0.5 1 1.5 2 2.5 3 0.3 0.6 0.9 1.2 figure 10. diode forward voltage versus current ? v sd , source ? to ? drain voltage (v) ? i s , source current t j = 25 c
NTR4502P, nvtr4502p http://onsemi.com 5 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 21: pin 1. gate 2. source 3. drain on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 NTR4502P/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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